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hexfet power mosfet notes through are on page 10 3mm x 3mm pqfn applications synchronous buck converter for computer processor power isolated dc to dc converters for network and telecom buck converters for set-top boxes system/load switch absolute maximum ratings parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r jc junction-to-case ??? 7.5 r ja junction-to-ambient ??? 45 c/w r ja junction-to-ambient (t<10s) ??? 31 -55 to + 150 2.8 0.02 1.8 max. 12 29 96 20 30 9.4 18 v w a c
form quantity IRFH3707PBF-1 pqfn 3mm x 3mm tape and reel 4000 irfh3707trpbf-1 package type standard pack orderable part number base part number features benefits industry-standard pinout pqfn 3mm x 3mm package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability v ds 30 v r ds(on) max (@v gs = 10v) 12.4 q g (typical) 5.4 nc i d (@t a = 25c) 12 a m

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! s d g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? . 0.0 . 1. 1. 1. 1. 1. . . 1.0 10 100 100 1 . .1 1 1.1 0. . 1. .1 1 . . .0 t d(on) turn-on delay time ??? 9.0 ??? t r rise time ???11??? t d(off) turn-off delay time ??? 9.9 ??? t f fall time ??? 5.6 ??? c iss input capacitance ??? 755 ??? c oss output capacitance ??? 171 ??? c rss reverse transfer capacitance ??? 83 ??? avalanche characteristics parameter units e as single pulse avalanche energy mj i ar avalanche current a diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 20 30 ns q rr reverse recovery charge ??? 27 41 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 4.5v, i d = 9.4a v gs = 4.5v typ. ??? r g =1.3 v ds = 15v, i d = 9.4a v ds = 24v, v gs = 0v, t j = 125c m a i d = 9.4a t j = 25c, i f = 9.4a, v dd = 15v di/dt = 200a/ s t j = 25c, i s = 9.4a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 20v v gs = -20v v ds = 24v, v gs = 0v mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 9.4a v gs = 0v v ds = 15v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 12a pf nc conditions see fig.15 max. 13 9.4 ? = 1.0mhz v ds = 15v ??? v ds = v gs , i d = 25 a a 3.5 ??? ??? 96 ??? ??? na ns

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! fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 60 s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60 s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 1 2 3 4 5 6 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 12a v gs = 10v

! fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0246810121416 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 9.4a 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100 sec 1msec 10msec

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! fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 2 4 6 8 10 12 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.5 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25 a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a

! fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f $
1 0.1 $ %& $ + - $ $ 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 5 10 15 20 25 30 35 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 12a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 10 20 30 40 50 60 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.95a 3.63a bottom 9.40a

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! d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17. gate charge test circuit fig 16.

for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period $ (#$
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* )++ + - + + + - - - $ ? !" # $ ? ! % &'&& ? # (( ? &'&& ) ! ' fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr

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! note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn package details

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! pqfn part marking pqfn tape and reel note: for the most current drawing please refer to ir website at: http://www.irf.com/package/

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repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.297mh, r g = 25 , i as = 9.4a. pulse width 400 s; duty cycle 2%. rthjc is guaranteed by design. when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. refer to application note #an-994. ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level pqfn 3mm x 3mm ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/

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